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| BUL56A lab seme semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 2/97 advanced distributed base design high voltage high speed npn silicon power transistor ? semefab designed and diffused die ? high voltage ? fast switching ? high energy rating designed for use in electronic ballast applications features ? multiCbase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. ? ion implant and high accuracy masking for tight control of characteristics from batch to batch. ? triple guard rings for improved control of high voltages. v cbo collector C base voltage(i e =0) v ceo collector C emitter voltage (i b = 0) v ebo emitter C base voltage (i c = 0) i c continuous collector current i c(pk) peak collector current i b base current p tot total dissipation at t case = 25c t stg operating and storage temperature range 350v 160v 10v 16a 22a 5a 85w C55 to +150c mechanical data dimensions in mm 123 15.1 10.2 6.3 4.5 1.3 3.6 dia. 1.3 18.0 14.0 0.85 2.54 0.5 2.54 pin 1 C base to220 pin 2 C collector pin 3 C emitter absolute maximum ratings (t case = 25c unless otherwise stated)
b ul56a l ab sem e semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 2/97 p arameter t est conditions min. t yp. max. unit v ceo(sus) v (br)cbo v (br)ebo i cbo i ceo i ebo h fe* v ce(sat)* v be(sat)* f t c ob collector C emitter sustaining voltage collector C base breakdown voltage emitter C base breakdown voltage collector C base cutCoff current collector C emitter cutCoff current emitter cutCoff current dc current gain collector C emitter saturation voltage base C emitter saturation voltage transition frequency output capacitance 160 350 10 10 100 100 10 100 30 80 25 60 5 0.07 0.2 0.2 0.6 0.6 1.2 0.95 1.2 1.2 1.8 20 75 v m a m a m a v v mhz pf i c = 10ma i c = 1ma i e = 1ma v cb = 350v t c = 125c i b = 0 v ce = 150v v eb = 9v i c = 0 t c = 125c i c = 0.3a v ce = 5v i c = 5a v ce = 5v i c = 12a v ce = 1v t c = 125c i c = 1a i b = 0.1a i c = 5a i b = 0.5a i c = 10a i b = 1.0a i c = 5a i b = 0.5a i c = 10a i b = 1.0a i c = 0.2a v ce = 4v v cb = 10v f = 1mhz electrical chara cteristics (t case = 25c unless otherwise stated) * pulse test t p = 300 m s , d < 2% electrical characteristics dynamic characteristics |
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